Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study

dc.contributor.author	Aradi, E.
dc.contributor.author	Naidoo, S.R.
dc.contributor.author	Billing, D.G.
dc.contributor.author	Wamwangi, D.
dc.contributor.author	Motochi, I.
dc.contributor.author	Derry, T.E.
dc.date.accessioned	2017-05-31T07:53:04Z
dc.date.available	2017-05-31T07:53:04Z
dc.date.issued	2014-03
dc.identifier.uri	http://hdl.handle.net/123456789/4794
dc.description	Full text	en_US
dc.description.abstract	The vibrational mode for the cubic symmetry of boron nitride (BN) has been produced by boron ion implantation of hexagonal boron nitride (h-BN). The optimum fluence at 150 keV was found to be 5 Â 1014 ions/cm2. The presence of the c-BN phase was inferred using glancing incidence XRD (GIXRD) and Fourier Transform Infrared Spectroscopy (FTIR). After implantation, Fourier Transform Infrared Spec- troscopy indicated a peak at 1092 cmÀ1 which corresponds to the vibrational mode for nanocrystalline BN (nc-BN). The glancing angle XRD pattern after implantation exhibited c-BN diffraction peaks relative to the implantation depth of 0.4 lm.	en_US
dc.language.iso	en	en_US
dc.publisher	Nuclear Instruments and Methods in Physics Research B	en_US
dc.relation.ispartofseries	331 (2014) 140–143;
dc.subject	Ion implantation	en_US
dc.subject	Boron nitride	en_US
dc.subject	Glancing incidence XRD	en_US
dc.subject	Fourier Transform Infrared Spectroscopy	en_US
dc.title	Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study	en_US
dc.type	Article	en_US