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Electrical Behavior of Cd0.3Zn1.1x S0.7 Thin Films for Non-Heat Light Emitting Diodes

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dc.contributor.author Cliff Orori Mosiori, John Maera, Reuben Shikambe and Robert Magare
dc.date.accessioned 2019-12-07T12:02:36Z
dc.date.available 2019-12-07T12:02:36Z
dc.date.issued 2017
dc.identifier.uri http://hdl.handle.net/123456789/10002
dc.description.abstract In developing countries like Kenya, solution processing technique is the cheapest and simplest technique to grow inorganic composites thin films. This method was used to grow thin films of Cd0.3Zn1.1xS0.7 on ordinary microscope Perspex substrate slides from aqueous solutions of Zinc chloride and cadmium chloride in ammonia solution. A solution of triethanalomine was used as a complexing agent while thiourea was used as source of sulphide ions. Electrical properties as a function of their thicknesses were obtained by varying deposition time while all other parameters were maintained constant. Using a resistance measurement device and a Gauss meter, resistivity and the conductivity of the films were found to be thickness dependent with semiconductor nature. en_US
dc.title Electrical Behavior of Cd0.3Zn1.1x S0.7 Thin Films for Non-Heat Light Emitting Diodes en_US


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